FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet

MOSFET N/P-CH 20V FLMP SC-75

FDJ1032C

Manufacturer Part Number
FDJ1032C
Description
MOSFET N/P-CH 20V FLMP SC-75
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDJ1032C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A, 2.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
200pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
SC75-6 FLMP
Configuration
Dual Dual Source
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V @ N Channel or +/- 8 V @ P Channel
Continuous Drain Current
3.2 A @ N Channel or 2.8 A @ P Channel
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDJ1032C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDJ1032C Rev. B2(W)
FDJ1032C
Complementary PowerTrench
Features
■ Q1 –2.8 A, –20 V.
■ Q2
■ Low gate charge
■ High performance trench technology for extremely low
■ FLMP SC75 package: Enhanced thermal performance in
■ RoHS Compliant
Applications
■ DC/DC converter
■ Load switch
■ Motor Driving
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
D
J
DSS
GSS
D
Symbol
θ JA
θ JC
R
industry-standard package size
, T
DS(ON)
STG
3.2 A, 20 V.
G1
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
S1
S2
R
R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
S1
– Continuous
– Pulsed
= 160 m Ω @ V
= 230 m Ω @ V
= 390 m Ω @ V
= 90 m Ω @ V
= 130 m Ω @ V
S2
Parameter
G2
T
A
GS
GS
GS
GS
GS
= 25°C unless otherwise noted
= 4.5 V
= –4.5 V
= –2.5 V
= –1.8 V
= 2.5 V
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
1
®
General Description
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
MOSFET
–2.8
–20
Q1
–12
± 8
4
5
6
Bottom Drain Contact
Bottom Drain Contact
–55 to +150
1.5
0.9
80
5
Q2 (N)
Q1 (P)
Q2
± 12
3.2
20
12
3
2
1
F
www.fairchildsemi.com
June 2008
Units
° C/W
° C
W
V
V
A

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FDJ1032C Summary of contents

Page 1

... J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient θ Thermal Resistance, Junction-to-Case θ JC ©2008 Fairchild Semiconductor Corporation FDJ1032C Rev. B2(W) ® MOSFET General Description = –4.5 V These N & P-Channel MOSFETs are produced using Fairchild GS = –2.5 V Semiconductor’s advanced PowerTrench process that has been GS = –1.8 V ...

Page 2

... Reverse Transfer Capacitance rss R Gate Resistance G Switching Characteristics t Turn-On Delay Time d(on) t Turn-On Rise Time r t Turn-Off Delay Time d(off) t Turn-Off Fall Time f FDJ1032C Rev. B2(W) Device Reel Size FDJ1032C 7" Test Conditions –250 µ 250 µ –250 µA, Referenced to 25 ° 250 µ ...

Page 3

... R is guaranteed by design while R is determined by the user's board design. θJC θCA a) Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDJ1032C Rev. B2(W) Test Conditions Q1 – –2 –4. ...

Page 4

... T , JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature - 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDJ1032C Rev. B2(W) 2.6 2 2.2 -2.5V 2 1.8 1.6 -2.0V 1.4 -1.8V 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 0.44 ...

Page 5

... DS(ON) 1s 100ms 1 DC 10s V = -4.5V GS SINGLE PULSE 0 140 C/W θ 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area. FDJ1032C Rev. B2(W) 500 V = -5V -10V DS 400 -15V 300 200 100 C RSS 0 2 2.5 3 3.5 0 Figure 8. Capacitance Characteristics 100 µs 1ms 6 10ms ...

Page 6

... JUNCTION TEMPERATURE ( ° Figure 13. On-Resistance Variation with Temperature -55 ° 1 GATE TO SOURCE VOLTAGE (V) GS Figure 15. Transfer Characteristics. FDJ1032C Rev. B2(W) 2 1.8 2.5V 1.6 1.4 1.2 2.0V 1 0 Figure 12. On-Resistance Variation with 0.28 0.24 0.2 0.16 0.12 0.08 0.04 75 100 125 150 1 Figure 14 ...

Page 7

... Typical Characteristics : θ FDJ1032C Rev. B2( µ θ ° www.fairchildsemi.com ° ° ...

Page 8

... PKG PKG (0.20) 0.50 1.00 Top View PKG C L 0.225 0.075 0.80 0.65 SEATING PLANE PKG FDJ1032C Rev. B2(W) (0.24) (0.18) 3 (0.73) (0.50) DRAIN 2 DRAIN 1 TERMINAL A 0. 1.75 1.55 3 0.275 0.125 0.075 Notes: Unless otherwise specified all dimensions are in millimeters. ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDJ1032C Rev. B2(W) FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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