FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 2

• Manufacturer Part Number: FDJ1032C
• Description: MOSFET N/P-CH 20V FLMP SC-75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 3.2 A @ N Channel or 2.8 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDJ1032C Rev. B2(W)
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
BV
∆ BV
I
I
On Characteristics (Note 2)
V
∆ V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
Symbol
FS
GS(th)
∆ T
∆ T
DS(on)
iss
oss
rss
G
GS(th)
DSS
DSS
J
J
Device Marking
.H
Drain-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Parameter
FDJ1032C
Device
V
V
I
I
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
V
Q1:
V
V
Q2:
V
V
D
D
D
D
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
= –250 µA, Referenced to 25 ° C
= 250 µA, Referenced to 25 ° C
= –250 µA, Referenced to 25 ° C
= 250 µA, Referenced to 25 ° C
=
= 0 V, I
= 0 V, I
= –16 V, V
= 16 V, V
= ±8 V, V
= ±12 V, V
= V
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
= –5 V, I
= 5 V, I
= –10 V, V
= 10 V, V
= –10 V, I
= –4.5 V, R
= 10 V, I
= 4.5V, R
GS
GS
Test Conditions
, I
, I
D
D
D
Reel Size
D
D
D
D
= –250 µA
= 250 µA
GS
D
D
D
= 3.2 A
GS
DS
GEN
D
= –250 µA
= 250 µA
GS
D
D
D
D
= – 2.8 A
GS
= 1 A,
DS
= 3.2 A
= 2.7 A
= 3.2, T
GEN
= –1 A,
2
= –2.8 A
= –2.2 A
= –1.7 A
=2.8A, T
= 0 V
= 0 V
= 0 V, f = 1.0 MHz
7"
= 0 V
= 0 V, f = 1.0 MHz
= 0 V
= 6 Ω
= 6 Ω
J
= 125 ° C
J
= 125 ° C
Type
Tape width
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8mm
Min
–0.4
–20
0.6
20
Typ
–0.8
–13
108
163
283
150
100
290
200
1.0
7.5
13
–3
70
83
55
50
29
30
14
13
13
11
18
3
5
3
8
7
8
2
Max Units
±100
±100
–1.5
160
230
390
238
130
132
1.5
–1
90
16
14
23
16
23
20
32
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1
4
Quantity
3000 units
mV/ ° C
mV/ ° C
m Ω
µ A
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S