FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 6

• Manufacturer Part Number: FDJ1032C
• Description: MOSFET N/P-CH 20V FLMP SC-75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 3.2 A @ N Channel or 2.8 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDJ1032C Rev. B2(W)
Typical Characteristics : Q2
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
10
12
10
8
6
4
2
0
1
8
6
4
2
0
-50
0
1
Figure 13. On-Resistance Variation with
Figure 11. On-Region Characteristics.
V
V
V
GS
I
DS
GS
Figure 15. Transfer Characteristics.
D
= 3.2A
= 4.5V
-25
= 5V
= 4.5V
0.5
1.5
V
T
V
0
GS
J
DS
, JUNCTION TEMPERATURE ( °C)
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
3.5V
1
Temperature.
25
2
T
3.0V
A
1.5
50
= -55 °C
2.5
75
2
125°C
2.5V
100
3
2.5
25°C
2.0V
125
150
3.5
3
6
0.0001
Figure 16. Body Diode Forward Voltage Variation
0.001
0.01
0.28
0.24
0.16
0.12
0.08
0.04
2.2
1.8
1.6
1.4
1.2
0.8
0.1
0.2
10
2
1
1
0
1
0
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
with Source Current and Temperature.
V
GS
V
= 0V
GS
Drain Current and Gate Voltage.
= 2.5V
0.2
2
V
SD
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
T
V
A
2
GS
= 125°C
T
, GATE TO SOURCE VOLTAGE (V)
A
= 25°C
0.4
I
4
D
, DRAIN CURRENT (A)
3.0V
25°C
0.6
6
3
3.5V
T
A
-55°C
= 125°C
0.8
8
4.0V
4
I
D
10
1
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= 1.6A
4.5V
1.2
12
5