AO6601 Alpha & Omega Semiconductor Inc, AO6601 Datasheet - Page 6

• Manufacturer Part Number: AO6601
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6601

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A, 2.3A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 390pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1076-2

AO6601
Alpha and Omega Semiconductor, Ltd.
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
225
200
175
150
125
100
20
15
10
75
50
350
300
250
200
150
100
5
0
50
0
0
0
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 5: On-Resistance vs. Gate-Source Voltage
1
Fig 1: On-Region Characteristics
1
2
2
2
-10V
-V
-V
4
DS
Voltage
GS
-I
(Volts)
D
3
(Volts)
(A)
V
V
GS
3
GS
6
=-4.5V
V
=-2.5V
I
GS
D
-2.5V
-2V
25°C
=-2A
4
125°C
-3V
=-10V
-5V
V
GS
-4V
=-3.5V
4
8
-4.5V
5
10
5
6
1.0E+01
1.0E+00
10
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
8
6
4
2
0
1
0
0
Figure 4: On-Resistance vs. Junction Temperature
0.0
0.5
25
Figure 2: Transfer Characteristics
V
GS
Figure 6: Body-Diode Characteristics
0.2
1
=-4.5V, V
50
125°C
V
Temperature (°C)
1.5
DS
0.4
=-5V
-V
GS
75
GS
=-10V
-V
(Volts)
2
25°C
SD
100
0.6
(Volts)
25°C
2.5
125
125°C
0.8
I
3
D
=-2A
V
GS
150
=-2.5V
3.5
1.0
175
4
1.2