AO6601 Alpha & Omega Semiconductor Inc, AO6601 Datasheet - Page 7

• Manufacturer Part Number: AO6601
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6601

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A, 2.3A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 390pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1076-2

AO6601 p-channel typical characteristics
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
5
4
3
2
1
0
10.0
0
1.0
0.1
0.01
0.1
0.1
10
0.00001
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
T
T
J(Max)
A
1
Figure 7: Gate-Charge Characteristics
=25°C
=150°C
D=T
T
R
1s
J,PK
θJA
Operating Area (Note E)
=110°C/W
on
=T
V
I
2
0.0001
D
/T
10s
DS
=-2.0A
A
1
+P
=-15V
0.1s
DM
-Q
-V
.Z
g
DS
3
(nC)
DC
θJA
(Volts)
.R
10ms
Figure 11: Normalized Maximum Transient Thermal Impedance
θJA
0.001
Single Pulse
1ms
100µs
4
10
10µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
5
0.01
100
6
Pulse Width (s)
0.1
600
500
400
300
200
100
20
15
10
5
0
0.001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
C
0.01
1
oss
Figure 8: Capacitance Characteristics
5
P
D
0.1
T
10
Ambient (Note E)
on
Pulse Width (s)
C
10
-V
T
rss
C
DS
iss
1
15
(Volts)
10
100
20
T
T
J(Max)
A
=25°C
=150°C
100
25
1000
1000
30