BSO204P Infineon Technologies, BSO204P Datasheet

MOSFET DUAL P-CH 20V 7A 8-SOIC

BSO204P

Manufacturer Part Number
BSO204P
Description
MOSFET DUAL P-CH 20V 7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO204P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
1.2V @ 60µA
Gate Charge (qg) @ Vgs
35.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
1513pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
30 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO204PINTR
SP000013487

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO204P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
OptiMOS
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSO204P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev.1.2
D
S
A
A
A
A
=-7A, V
=-7 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=-16V, di/dt=200A/µs, T
TM
=-10V, R
-P Power-Transistor
GS
Package
P-SO 8
=25Ω
j
= 25 °C, unless otherwise specified
jmax
=150°C
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
st g
G2
G1
S2
S1
1
2
3
4
Top View
-55... +150
55/150/56
Product Summary
V
R
I
8
7
6
5
D
Value
SIS00070
DS
DS(on)
-5.6
±12
-28
63
-7
-6
D1
D1
D2
D2
2
2001-12-03
BSO204P
-20
30
-7
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for BSO204P

BSO204P Summary of contents

Page 1

... Reverse diode dv/dt I =-7A, V =-16V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot Page 1 BSO204P Product Summary V - DS(on Top View SIS00070 Value -7 -5.6 -28 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO204P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - -0.6 -0 ...

Page 3

... DD GS d(on =-1A, R =6Ω d(off =-15V =-15V, I =-7A -4. (plateau) V =-15V =25° = =-10V /dt=100A/µ Page 3 BSO204P Values Unit min. typ. max. 12 1513 - pF - 567 - - 469 - - 12.9 19 20.5 30 35.3 52 -11.3 -16.9 - -23.9 -35 -28 - -0.87 -1. 28.7 35 14.5 18.1 nC 2001-12-03 ...

Page 4

... Rev.1.2 2 Drain current parameter: |V -7.5 A -5.5 -4.5 -3.5 -2.5 -1.5 -0.5 °C 100 120 160 Transient thermal impedance Z thJS parameter : K 180.0µ - Page |≥ 4 BSO204P - 100 = BSO204P single pulse - BSO204P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2001-12-03 ...

Page 5

... Rev.1.2 6 Typ. drain-source on resistance R DS(on) parameter: V Ω Vgs = -2.5V 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0. Typ. forward transconductance | f(I DS(on)max fs parameter µs V 1.5 2 Page 0.1 Vgs = -2.5V Vgs= -2.8 Vgs= -3 Vgs= -3.5 Vgs = - 4.5V Vgs =25° BSO204P 2001-12-03 ...

Page 6

... V °C 100 160 Forward character. of reverse diode parameter -10 -10 -10 - Page -60 µ 1.6 V 1.2 98% 1 0.8 typ. 0.6 2% 0.4 0.2 0 -60 - µ BSO204P °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 BSO204P °C 100 160 2001-12-03 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j BSO204P -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge |V GS parameter: I °C 100 150 T j 100 °C 180 T j Page Gate = -7 A pulsed 0.2 VDS max. 0.5 VDS max. 7 0.8 VDS max BSO204P Gate | 2001-12-03 ...

Page 8

Rev.1.2 Page 8 BSP204P 2001-12-03 ...

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