BSO204P Infineon Technologies, BSO204P Datasheet - Page 5

• Manufacturer Part Number: BSO204P
• Description: MOSFET DUAL P-CH 20V 7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO204P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 60µA
• Gate Charge (qg) @ Vgs: 35.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1513pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 30 m Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO204PINTR; SP000013487

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
Rev.1.2
A
A
30
20
15
10
28
24
22
20
18
16
14
12
10
5
0
8
6
4
2
0
0
0
DS
GS
); T
); |V
0.5
p
p
0.5
= 80 µs
= 80 µs
j
=25°C
DS
|≥ 2 x |I
1
1
Vgs = -2.8V
Vgs = -3V
Vgs = -3.5V
Vgs = -4.5V
Vgs = -6V
1.5
D
| x R
1.5
Vgs = -2.5V
2
DS(on)max
V
V
- V
- V
DS
GS
2.5
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
= f(I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Ω
0.1
S
45
35
30
25
20
15
10
0
5
0
0
0
D
= f (I
); T
Vgs= -2.8
Vgs= -3
Vgs= -3.5
Vgs = - 4.5V
Vgs= - 6V
j
5
=25°C
5
D
GS
)
10
10
15
15
Vgs = -2.5V
20
20
2001-12-03
BSO204P
A
A
- I
- I
D
D
30
30