BSO204P Infineon Technologies, BSO204P Datasheet - Page 6

MOSFET DUAL P-CH 20V 7A 8-SOIC

BSO204P

Manufacturer Part Number
BSO204P
Description
MOSFET DUAL P-CH 20V 7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO204P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
1.2V @ 60µA
Gate Charge (qg) @ Vgs
35.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
1513pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
30 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO204PINTR
SP000013487

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO204P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
Rev.1.2
10
pF
10
10
45
35
30
25
20
15
-60
4
3
2
0
DS
= f(T j )
)
D
-20
GS
= -7 A, V
5
=0, f=1 MHz
20
Coss
Ciss
Crss
GS
10
98%
typ.
60
= -4.5 V
100
V
°C
T
- V
j
DS
160
20
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
1.6
1.2
0.8
0.6
0.4
0.2
A
V
-1
1
0
-60
2
1
0
0
BSO204P
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
2%
typ.
98%
-1.6
D
60
= -60 µA
-2
100
2001-12-03
BSO204P
-2.4
°C
V
V
T
SD
j
160
-3

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