FDC6000NZ Fairchild Semiconductor, FDC6000NZ Datasheet - Page 5

• Manufacturer Part Number: FDC6000NZ
• Description: MOSFET N-CH DUAL 20V 6.5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 840pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6000NZTR; FDC6000NZ_NL; FDC6000NZ_NLTR; FDC6000NZ_NLTR

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
20
15
10
30
25
20
15
10
5
0
1
5
0
Figure 3. On-Resistance Variation with
-50
0
Figure 1. On-Region Characteristics.
1
V
Figure 5. Transfer Characteristics.
GS
V
I
V
D
GS
= 4.5V
3.5V
DS
= 6.5A
-25
= 4.5V
= 5V
0.5
V
V
T
GS
0
J
3.0V
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
2.5V
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
1.5
25
1
50
2.0V
T
1.5
A
= -55
75
2
o
C
o
1.8V
100
C)
125
o
2
C
125
25
o
C
2.5
150
2.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.062
0.057
0.052
0.047
0.042
0.037
0.032
0.027
0.022
0.017
0.012
0.01
100
0.1
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
3
2
1
1
0
0
1
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
T
= 1.8V
A
Gate-to-Source Voltage.
= 25
0.2
V
2.0V
SD
o
C
, BODY DIODE FORWARD VOLTAGE (V)
V
5
2
GS
T
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
I
D
2.5V
, DRAIN CURRENT (A)
o
C
25
0.6
3.0V
10
3
o
C
T
A
= 125
-55
0.8
o
3.5V
C
o
C
15
4
I
1
D
4.5V
= 3.3 A
FDC6000NZ Rev E1(W)
1.2
20
5