FDC6000NZ Fairchild Semiconductor, FDC6000NZ Datasheet - Page 6

• Manufacturer Part Number: FDC6000NZ
• Description: MOSFET N-CH DUAL 20V 6.5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 840pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6000NZTR; FDC6000NZ_NL; FDC6000NZ_NLTR; FDC6000NZ_NLTR

Typical Characteristics
0.01
100
0.1
5
4
3
2
1
0
10
1
Figure 9. Maximum Safe Operating Area.
0
0.1
Figure 7. Gate Charge Characteristics.
0.01
SINGLE PULSE
R
0.1
I
D
R
θ JA
0.0001
V
1
= 6.5A
DS(ON)
T
GS
A
= 102
= 25
= 4.5V
LIMIT
o
o
C
2
C/W
D = 0.5
0.2
0.1
V
0.05
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
DC
g
, GATE CHARGE (nC)
10s
0.001
4
SINGLE PULSE
1s
100ms
V
DS
10ms
Figure 11. Transient Thermal Response Curve.
= 5V
6
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
10
15V
100µs
0.01
8
10V
100
10
0.1
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0.0001
0
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
1
RSS
0.001
C
OSS
V
Power Dissipation.
DS
5
0.01
, DRAIN TO SOURCE VOLTAGE (V)
10
C
ISS
t
0.1
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
θJA
- T
θJA
(t) = r(t) * R
A
t
= 102 °C/W
100
1
= P * R
t
10
2
SINGLE PULSE
R
θ JA
15
T
A
= 102°C/W
= 25°C
θJA
V
f = 1MHz
100
1
θJA
GS
(t)
/ t
FDC6000NZ Rev E1(W)
= 0 V
2
1000
1000
20