FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 209

• Manufacturer Part Number: FDR8308P
• Description: MOSFET P-CH DUAL 20V 3.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8308P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR8308P; FDR8308PTR

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Discrete
Discrete IGBT (SMPS I)
HGT G
12
(Continued)
N 60
A
4
D
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
1: First Generation
2: Second Generation
3: Third Generation
4: SMPS
N: NPT
A: 100ns
B: 200ns
C: 500ns
i.e., (600, 1200)
N-Channel or P-Channel
Rating at T
Rating at T
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3-Lead TO-264
Options
Max Fall Time At T
Voltage Breakdown/10
Polarity
SMPS Rated Current
Gen. 1, 2, 3 Continuous Current
Package
Fairchild
C
C
= +75°C 100kHz Operation
= +110°C
8-16
J
= +150°C
E: ≤ 1µs
F: ≤ 2µs
G: ≤ 5µs
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