2N7002W Fairchild Semiconductor, 2N7002W Datasheet - Page 2

• Manufacturer Part Number: 2N7002W
• Description: MOSFET N-CH 60V 115MA SOT-323
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7002W

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002WTR

2N7002W Rev. A1
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Note1 : Short duration test pulse used to minimize self-heating effect.
Symbol
R
BV
V
t
I
t
D(OFF)
DS(ON)
I
D(ON)
C
D(ON)
I
GS(th)
C
C
g
DSS
GSS
FS
oss
DSS
rss
iss
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(Note1)
(Note1)
Parameter
T
A
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
R
GS
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
L
=150, R
=0V, I
=60V, V
=60V, V
=±20V, V
=V
=5V, I
=10V, I
=10V, V
=10V, I
=25V, V
=30V, I
GS
Test Condition
2
, I
D
D
D
=0.05A,
D
D
D
=10uA
GS
GS
GS
DS
GEN
=0.2A
=0.5A, @T
=0.2A, V
=250A
DS
=0V
=0V, @T
=7.5V
=0V, f=1.0MHz
=0V
=25
GEN
C
J
=125C
=125°C
=10V
Min.
1.0
0.5
60
80
-
-
-
-
-
-
-
-
-
0.001
356.5
Typ.
1.76
2.53
1.43
37.8
12.4
5.85
12.5
0.2
1.6
6.5
78
7
Max. Units
13.5
500
±10
1.0
2.0
7.5
7.0
50
25
20
20
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-
-
-
mS
A
nA
pF
pF
pF
ns

V
V
A