2N7002W Fairchild Semiconductor, 2N7002W Datasheet - Page 3

• Manufacturer Part Number: 2N7002W
• Description: MOSFET N-CH 60V 115MA SOT-323
• Manufacturer: Fairchild Semiconductor

Specifications of 2N7002W

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002WTR

© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation with
Figure 5. Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
-50
2
0
V
Temperature
DS
1
= 10V
2
V
3
0
25
GS
V
V
T
DS
GS
3
J
o
= 10V
V
I
. JUNCTION TEMPERATURE(
C
D
T
. DRAIN-SOURCE VOLTAGE (V)
GS
. GATE-SOURCE VOLTAGE (V)
J
= 500 mA
= -25
= 10V
4
o
C
5V
5
50
4
6
75
4V
o
C
7
100
125
5
3V
8
o
C
o
C)
150
9
o
2V
C
150
10
6
3
Figure 2. On-Resistance Variation with Gate
Figure 4. On-Resistance Variation with
Figure 6. Gate Threshold Variation with
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
-50
3.0
2.5
2.0
1.5
1.0
0.0
2
Voltage and Drain Current
Gate-Source Voltage
I
Temperature
D
= 50 mA
V
GS
0.2
= 3V
0
4
T
I
D
I
V
J
D
. JUNCTION TEMPERATURE(
= 0.25 mA
. DRAIN-SOURCE CURRENT(A)
GS
. GATE-SOURCE VOLTAGE (V)
0.4
I
D
= 500 mA
4V
50
6
I
D
0.6
= 1 mA
7V
4.5V
8V
100
8
5V
0.8
o
V
C)
9V
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GS
6V
= V
10V
DS
1.0
10
150