NDS332P Fairchild Semiconductor, NDS332P Datasheet - Page 4

• Manufacturer Part Number: NDS332P
• Description: MOSFET P-CH 20V 1A SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS332P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 195pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS332PTR

Typical Electrical Characteristics
-2.5
-1.5
-0.5
-2
-1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
-1.5
-1.2
-0.9
-0.6
-0.3
0
1
0
-50
0
V
-0.5
Figure 1. On-Region Characteristics
GS
Figure 3. On-Resistance Variation
-3.0
V
= -4.5V
Figure 5. Transfer Characteristics
I = -1A
V
D
-3.5
GS
DS
-25
-0.5
= -2.7
= - 3V
-0.75
V
with Temperature
DS
V
T , JUNCTION TEMPERATURE (°C)
0
, DRAIN-SOURCE VOLTAGE (V)
J
GS
-1
-2.7
, GATE TO SOURCE VOLTAGE (V)
-1
-2.5
25
-1.5
-1.25
50
-2.0
-2
75
.
T = -55°C
-1.5
J
100
-2.5
-1.5
-1.75
.
25°C
125
.
125°C
-3
150
-2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1.15
1.05
0.95
0.85
1
1
1.1
0.9
0.8
0
0
V
with Drain Current and Gate Voltage
Figure 2. On-Resistance Variation
1
-50
with Drain Current and Temperature
GS
V
Figure 4. On-Resistance Variation
GS
=-2.0V
Figure 6. Gate Threshold Variation
= -2.7 V
-0.5
-0.5
-25
0
T , JUNCTION TEMPERATURE (°C)
with Temperature.
J
I
-1
I , DRAIN CURRENT (A)
-1
D
D
, DRAIN CURRENT (A)
-2.5
25
-2.7
T = 125°C
-1.5
-1.5
J
50
25°C
-55°C
-3.0
75
-2
-2
-3.5
I
V
D
100
DS
= -250µA
-2.5
-2.5
= V
-4.5
.
.
GS
125
-3
-3
NDS332P Rev.E
150