NDS332P Fairchild Semiconductor, NDS332P Datasheet - Page 6

MOSFET P-CH 20V 1A SSOT3

NDS332P

Manufacturer Part Number
NDS332P
Description
MOSFET P-CH 20V 1A SSOT3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS332P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
195pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
410mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-600mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS332PTR

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Typical Electrical Characteristics
0.8
0.6
0.4
0.2
0.005
0.002
0.001
4
3
2
1
0
0.05
0.02
0.01
Figure 13. Transconductance Variation with
1
0
0
0.5
0.2
0.1
Steady-State Power Dissipation versus
0.0001
V
0
Figue 15. SuperSOT
1
DS
1b
1a
=- 5V
D = 0.5
0.02
0.01
0.05
-0.5
0.2
0.1
Drain Current and Temperature
Copper Mounting Pad Area.
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
Single Pulse
2oz COPPER MOUNTING PAD AREA (in )
0.1
change depending on the circuit board design.
-1
I , DRAIN CURRENT (A)
D
0.001
TM _
-1.5
0.2
3 Maximum
T = -55°C
J
125°C
25°C
-2
0.01
0.3
(continued)
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
2
-2.5
.
o
0.4
-3
0.1
t , TIME (sec)
1
0.03
0.01
0.5
0.1
20
10
1.4
1.2
0.8
0.6
Figure 14. Maximum Safe Operating Area
5
2
1
0.1
1
0
Current versus Copper Mounting Pad Area
Figure 16. Maximum Steady-State Drain
1a
R
SINGLE PULSE
JA
0.2
V
1b
T
= See Note 1b
GS
A
1
= 25°C
= -2.7V
2oz COPPER MOUNTING PAD AREA (in )
-V
0.5
0.1
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
2
T - T
R
R
Duty Cycle, D = t /t
J
0.2
10
JA
JA
t
1
A
(t) = r(t) * R
= See Note 1b
t
= P * R
2
5
4.5"x5" FR-4 Board
T = 25 C
Still Air
V
10
A
GS
JA
1
= -2.7V
0.3
JA
(t)
2
2
o
20
100
.
NDS332PRev. E
.
50
0.4
300

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