FDN336P Fairchild Semiconductor, FDN336P Datasheet
FDN336P
Manufacturer Part Number
FDN336P
Description
MOSFET P-CH 20V 1.3A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN336P.pdf
(5 pages)
Specifications of FDN336P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
330pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN336PTR
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FDN336P
Single P-Channel 2.5V Specified PowerTrench
General Description
This P-Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
©2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
SuperSOT -3
Fairchild
336
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
Semiconductor’s
G
– Continuous
– Pulsed
FDN336P
Device
Parameter
S
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
•
•
•
•
–1.3 A, –20 V. R
Low gate charge (3.6 nC typical)
High performance trench technology for extremely
low R
SuperSOT
higher power handling capability than SOT23 in
the same footprint
®
DS(ON)
MOSFET
TM
Tape width
G
-3 provides low R
–55 to +150
8mm
Ratings
R
DS(ON)
DS(ON)
–
0.46
–20
–10
250
0.5
±8
1.3
75
D
= 0.20 Ω @ V
= 0.27 Ω @ V
S
DS(ON)
January 2005
GS
GS
and 30%
3000 units
Quantity
= –4.5 V
= –2.5 V
FDN306P Rev D
Units
°C/W
°C/W
°C
W
V
V
A
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FDN336P Summary of contents
Page 1
... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device 336 FDN336P ©2005 Fairchild Semiconductor Corporation ® MOSFET Features • –1.3 A, – advanced • Low gate charge (3.6 nC typical) • High performance trench technology for extremely ...
Page 2
... -0 -4 GEN -0. 270 C/W when mounted 0.001 in pad of 2oz Cu. Min Typ Max - -16 - 55°C J 100 -100 -0.4 -0.9 -1 0.122 T =125°C 0.18 0.32 J 0.19 0. 330 3.6 0.8 0.7 -0.42 -0.7 -1.2 (Note) Units µA µ 0 guaranteed by JC FDN336P Rev.D ...
Page 3
... DRAIN CURRENT (A) D Drain Current and Gate I = -0. 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.4 FDN336P Rev.D ...
Page 4
... Transient thermal response will change depending on the circuit board design. C iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =270°C 25°C A 0.001 0.01 0 100 300 SINGLE PULSE TIME (SEC) Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 FDN336P Rev.D 20 300 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...