FDN336P Fairchild Semiconductor, FDN336P Datasheet - Page 4

• Manufacturer Part Number: FDN336P
• Description: MOSFET P-CH 20V 1.3A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN336P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN336PTR

Typical Electrical Characteristics
Figure 7. Gate Charge Characteristics.
0.03
0.01
5
4
3
2
1
0
Figure 9. Maximum Safe Operating Area.
0.3
0.1
30
10
0
3
1
0.2
I
D
R
SINGLE PULSE
0.005
0.002
0.001
= -1.3A
0.05
0.02
0.01
V
JA
T
0.5
0.2
0.1
0.0001
GS
A
1
= 270°C/W
= 25°C
= -4.5V
0.5
D = 0.5
1
-V
DS
0.2
Q
0.1
g
, DRAIN-SOURCE VOLTAGE (V)
1
0.05
, GATE CHARGE (nC)
0.02
0.01
0.001
2
Single Pulse
Figure 11. Transient Thermal Response Curve.
V
DS
= -5V
3
-10V
5
-15V
3
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
10
0.01
(continued)
4
30
0.1
t , TIME (sec)
1
700
400
200
100
40
0.1
50
40
30
20
10
0.0001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
0.2
= 0 V
1
0.001
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0.01
SINGLE PULSE TIME (SEC)
Dissipation.
P(pk)
1
10
0.1
T - T
R
Duty Cycle, D = t /t
J
R
JA
2
t
JA
1
A
(t) = r(t) * R
t
= P * R
2
= 270 °C/W
1
SINGLE PULSE
R
JA
T = 25°C
5
JA
A
1
100
10
=270°C/W
JA
(t)
2
10
FDN336P Rev.D
C iss
C oss
C rss
100 300
300
20