FDN336P Fairchild Semiconductor, FDN336P Datasheet - Page 2

• Manufacturer Part Number: FDN336P
• Description: MOSFET P-CH 20V 1.3A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN336P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 330pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN336PTR

design while R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
1. R
Note:
FS
BV
GS(th)
V
SD
DS(ON)
iss
oss
rss
Scale 1 : 1 on letter size paper
g
gs
gd
DSS
GS(th)
JA
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
CA
J
J
is determined by the user's board design.
a. 250
a 0.02 in
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
C/W when mounted on
2
pad of 2oz Cu.
(Note 2)
(Note 2)
(T
A
= 25
O
C unless otherwise noted )
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
b. 270
= 0 V, I
= -16 V, V
= 8 V, V
= -8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -4.5 V, I
= -10 V, V
= -5 V, I
= -4.5 V, R
= -10 V, I
= -4.5 V
= 0 V, I
a 0.001 in
o
GS
C/W when mounted on
, I
2
D
D
S
DS
pad of 2oz Cu.
D
= -0.42 A
= -250 µA
DS
= -250 µA
D
D
D
= 0 V
GS
GS
= -0.5 A,
D
= - 2 A,
DS
GEN
= 0 V
= -2 A
= -1.3 A
= -1.1 A
= 0 V
= 0 V,
= -5 V
= 6
(Note)
T
T
J
J
= 55°C
o
o
=125°C
C
C
Min
-0.4
-20
-5
0.122
Typ
0.18
0.19
-0.9
-0.7
330
-16
3.6
0.8
0.7
80
35
12
16
3
4
7
5
-0.42
Max
-100
0.32
0.27
100
-1.5
-1.2
-10
0.2
15
22
26
12
-1
5
JC
is guaranteed by
FDN336P Rev.D
mV /
mV /
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C