FDN327N Fairchild Semiconductor, FDN327N Datasheet
FDN327N
Manufacturer Part Number
FDN327N
Description
MOSFET N-CH 20V 2A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDN327N.pdf
(5 pages)
Specifications of FDN327N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
423pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.07Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Drain Current (max)
2A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN327N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN327N
Manufacturer:
DIODES
Quantity:
21 000
Company:
Part Number:
FDN327N
Manufacturer:
Fairchild Semiconductor
Quantity:
25 380
Part Number:
FDN327N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN327N-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN327N-NL/327
Manufacturer:
ELM
Quantity:
20 000
Part Number:
FDN327N_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
, T
JA
JC
Load switch
Battery protection
Power management
Device Marking
STG
327
SuperSOT -3
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
– Continuous
– Pulsed
FDN327N
G
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
2 A, 20 V.
Low gate charge (4.5 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
Tape width
G
R
R
R
DS(ON)
DS(ON)
DS(ON)
–55 to +150
Ratings
8mm
0.46
250
0.5
20
75
2
8
= 70 m
= 80 m
= 120 m
D
8
S
@ V
@ V
@ V
October 2001
GS
GS
GS
= 4.5 V
= 2.5 V
FDN327N Rev C (W)
3000 units
= 1.8 V
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDN327N Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size Tape width 7’’ October 2001 = 4.5 V DS(ON 2.5 V DS(ON 120 1.8 V DS(ON Ratings Units 0.5 W 0.46 –55 to +150 C 250 C/W 75 C/W Quantity 8mm 3000 units FDN327N Rev C (W) ...
Page 2
... MHz 4 GEN 4 0. determined by the user's board design 270°C/W when mounted on a minimum pad. 2.0% Min Typ Max Units mV 100 nA –100 nA 0.4 0.7 1.5 V –3 mV 120 55 103 423 6 4.5 6.3 nC 0.89 nC 0.95 nC 0.42 A 0.6 1.2 V (Note 2) FDN327N Rev C (W) ...
Page 3
... V Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDN327N Rev C ( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 FDN327N Rev C (W) 20 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...