FDN327N Fairchild Semiconductor, FDN327N Datasheet - Page 4

• Manufacturer Part Number: FDN327N
• Description: MOSFET N-CH 20V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN327N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 423pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 2A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN327N

Typical Characteristics
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
5
4
3
2
1
0
1
0.001
Figure 7. Gate Charge Characteristics.
0
0.1
0.01
0.1
R
0.0001
1
SINGLE PULSE
I
DS(ON)
R
D
JA
= 2A
V
T
GS
A
= 270
= 25
LIMIT
= 4.5V
D = 0.5
o
o
C/W
C
0.2
0.1
0.05
V
0.02
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
2
Q
1
g
, GATE CHARGE (nC)
0.001
DC
SINGLE
PULSE
1s
100ms
V
Figure 11. Transient Thermal Response Curve.
DS
10ms
= 5V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
10
1ms
0.01
15V
100µs
10V
100
6
0.1
600
500
400
300
200
100
20
15
10
5
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
1
0.01
4
V
DS
Power Dissipation.
C
, DRAIN TO SOURCE VOLTAGE (V)
OSS
0.1
10
8
t
1
, TIME (sec)
1
C
ISS
P(pk)
Duty Cycle, D = t
12
T
R
R
J
JA
- T
JA
10
(t) = r(t) + R
t
1
A
100
= 270 °C/W
t
= P * R
SINGLE PULSE
2
R
JA
T
A
= 270°C/W
16
= 25°C
100
FDN327N Rev C (W)
JA
V
f = 1MHz
1
GS
JA
(t)
/ t
2
= 0 V
1000
20
1000