FDN327N Fairchild Semiconductor, FDN327N Datasheet - Page 3

• Manufacturer Part Number: FDN327N
• Description: MOSFET N-CH 20V 2A SSOT-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN327N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 423pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 2A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN327N

Typical Characteristics
16
12
12
8
4
0
1.6
1.4
1.2
0.8
0.6
9
6
3
0
1
0.5
0
Figure 3. On-Resistance Variation with
-50
V
Figure 1. On-Region Characteristics.
GS
Figure 5. Transfer Characteristics.
3.0V
V
= 4.5V
V
DS
GS
I
D
0.5
= 5V
-25
= 2A
= 4.5V
V
V
1
GS
T
0
DS
J
1
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
2.5V
Temperature.
25
1.5
1.5
50
T
A
2
=-55
2.0V
75
o
C
2.5
o
100
1.8V
C)
125
2
o
C
25
3
125
o
C
150
3.5
2.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.18
0.14
0.06
0.02
0.01
100
0.1
0.1
1.8
1.6
1.4
1.2
0.8
10
1
2
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
0
Drain Current and Gate Voltage.
V
T
GS
A
V
= 25
GS
= 1.8V
0.2
= 0V
Gate-to-Source Voltage.
V
o
C
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
2
GS
4
0.4
, GATE TO SOURCE VOLTAGE (V)
T
2.0V
A
T
= 125
I
A
D
, DRAIN CURRENT (A)
= 125
o
C
0.6
o
25
C
2.5V
o
C
8
3
-55
0.8
o
C
3.0V
1
3.5V
12
4
FDN327N Rev C (W)
I
D
1.2
= 1A
4.5V
16
1.4
5