FDS8882 Fairchild Semiconductor, FDS8882 Datasheet - Page 3

• Manufacturer Part Number: FDS8882
• Description: MOSFET N-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8882TR

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
Typical Characteristics
21
18
15
12
1.6
1.4
1.2
1.0
0.8
0.6
21
18
15
12
9
6
3
0
Figure 3. Normalized On Resistance
9
6
3
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
D
GS
DS
= 9 A
-50
vs Junction Temperature
= 10 V
= 5 V
V
DS
V
T
-25
GS
0.5
J
On Region Characteristics
,
,
1
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
V
GS
GS
GS
GS
0
= 10 V
= 4.5 V
= 3.5 V
= 6 V
T
J
25
µ
= 150
1.0
s
2
50
T
o
C
J
= 25 °C unless otherwise noted
75
µ
s
1.5
3
o
100 125 150
T
V
C )
J
GS
T
= -55
J
= 3 V
= 25
o
C
o
C
2.0
4
3
0.01
0.1
3.0
2.5
2.0
1.5
1.0
0.5
30
10
50
40
30
20
10
1
0.2
Figure 2.
0
Figure 4.
0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
2
Figure 6.
V
GS
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= 3 V
J
V
= 0 V
3
= 150
SD
T
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
= 25
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
I
D
Source Voltage
o
Source to Drain Diode
4
,
C
o
,
6
DRAIN CURRENT (A)
C
GATE TO SOURCE VOLTAGE (V)
0.6
9
V
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
GS
s
T
12
= 6 V
J
I
0.8
D
= 125
= 9 A
V
GS
T
J
= 3.5 V
o
= -55
15
C
T
V
J
8
GS
1.0
= 25
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o
V
C
= 4.5 V
GS
18
o
= 10 V
C
µ
s
1.2
21
10