FDS8882 Fairchild Semiconductor, FDS8882 Datasheet - Page 5

• Manufacturer Part Number: FDS8882
• Description: MOSFET N-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8882TR

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13.
10
-3
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
SINGLE PULSE
R
θ
JA
10
= 125
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
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