FDS8882 Fairchild Semiconductor, FDS8882 Datasheet - Page 4

• Manufacturer Part Number: FDS8882
• Description: MOSFET N-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8882TR

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
Typical Characteristics
0.01
100
0.1
10
10
20
10
1
0.001
0.01
Figure 7.
8
6
4
2
0
1
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
Figure 11. Forward Bias Safe
D
= 9 A
0.01
V
Switching Capability
DS
3
Gate Charge Characteristics
0.1
t
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
DS(on)
J
A
θ
Unclamped Inductive
JA
= MAX RATED
, TIME IN AVALANCHE (ms)
= 25
Q
= 125
V
g
, GATE CHARGE (nC)
DD
o
C
0.1
= 10 V
6
T
o
C/W
J
= 125
1
V
DD
= 20 V
T
o
T
C
9
J
1
J
= 25 °C unless otherwise noted
= 25
V
o
10
DD
T
C
J
= 100
= 15 V
12
10
100 ms
o
1 ms
10 ms
1 s
10 s
100 us
DC
C
100
100
15
4
1000
100
2000
1000
0.1
10
100
10
25
Figure 10.
1
20
8
6
4
2
0
10
0.1
Figure 12.
-4
Current vs Ambient Temperature
Figure 8.
f = 1 MHz
V
GS
10
= 0 V
50
-3
V
V
T
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
GS
A
V
, DRAIN TO SOURCE VOLTAGE (V)
,
10
GS
AMBIENT TEMPERATURE (
= 10 V
Single Pulse Maximum
Capacitance vs Drain
t, PULSE WIDTH (sec)
-2
= 4.5 V
V
GS
75
10
= 10 V
1
-1
R
θ
100
JA
1
= 50
SINGLE PULSE
R
T
A
o
θ
10
C/W
JA
= 25
125
= 125
o
C )
o
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10
C
100
C
C
o
C
C/W
oss
rss
iss
150
1000
30