FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 2
![MOSFET N-CH 30V 12.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6680A
Manufacturer Part Number
FDS6680A
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6680A.pdf
(5 pages)
Specifications of FDS6680A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6680ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6680A
Manufacturer:
FSC
Quantity:
10 000
Company:
Part Number:
FDS6680A
Manufacturer:
FAIRCHILD
Quantity:
306
Company:
Part Number:
FDS6680A
Manufacturer:
FSC
Quantity:
1 452
Part Number:
FDS6680A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680AS-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6680A_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
G
SD
θJA
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
rr
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
θJC
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
θCA
2
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
T
D
D
F
A
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 12.5 A,
= 250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 25°C unless otherwise noted
= 0 V,
= 24 V,
= 24 V, V
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 15 V,
= 15 V,
= 15 mV,
= 15 V,
= 10 V,
= 15 V,
= 5 V
= 0 V,
Test Conditions
GS
b) 105°C/W when
,
mounted on a .04 in
pad of 2 oz copper
I
D
S
d
GS
= 12.5 A, T
= 2.1 A
iF
I
V
V
I
I
I
V
I
V
I
D
D
D
D
D
f = 1.0 MHz
I
R
D
/d
D
GS
DS
DS
= 0 V, T
GS
= 250 µA
= 250 µA
= 12.5 A
= 10.5 A
= 12.5 A
GEN
= 12.5 A,
= 1 A,
t
= 5 V
= 100 A/µs
= 0 V
= 0 V
= 0 V,
= 6 Ω
2
J
(Note 2)
J
=55°C
=125°C
Min
30
25
1
Typ
1620
–4.9
11.0
0.73
380
160
7.8
9.9
1.3
5.8
25
64
10
27
15
16
28
18
c) 125°C/W when mounted
2
5
5
on a minimum pad.
Max Units
±100
9.5
2.1
1.2
10
13
15
19
10
43
27
23
1
3
FDS6680A Rev F1(W)
mV/°C
mV/°C
mΩ
nC
µA
µA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
S
Ω
A
V