FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 2

• Manufacturer Part Number: FDS6680A
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 5V
• Input Capacitance (ciss) @ Vds: 1620pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680ATR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
G
SD
θJA
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
rr
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
θJC
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
θCA
2
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
T
D
D
F
A
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 12.5 A,
= 250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 25°C unless otherwise noted
= 0 V,
= 24 V,
= 24 V, V
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 15 V,
= 15 V,
= 15 mV,
= 15 V,
= 10 V,
= 15 V,
= 5 V
= 0 V,
Test Conditions
GS
b) 105°C/W when
,
mounted on a .04 in
pad of 2 oz copper
I
D
S
d
GS
= 12.5 A, T
= 2.1 A
iF
I
V
V
I
I
I
V
I
V
I
D
D
D
D
D
f = 1.0 MHz
I
R
D
/d
D
GS
DS
DS
= 0 V, T
GS
= 250 µA
= 250 µA
= 12.5 A
= 10.5 A
= 12.5 A
GEN
= 12.5 A,
= 1 A,
t
= 5 V
= 100 A/µs
= 0 V
= 0 V
= 0 V,
= 6 Ω
2
J
(Note 2)
J
=55°C
=125°C
Min
30
25
1
Typ
1620
–4.9
11.0
0.73
380
160
7.8
9.9
1.3
5.8
25
64
10
27
15
16
28
18
c) 125°C/W when mounted
2
5
5
on a minimum pad.
Max Units
±100
9.5
2.1
1.2
10
13
15
19
10
43
27
23
1
3
FDS6680A Rev F1(W)
mV/°C
mV/°C
mΩ
nC
µA
µA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
S
Ω
A
V