FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 3

• Manufacturer Part Number: FDS6680A
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 5V
• Input Capacitance (ciss) @ Vds: 1620pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680ATR

Typical Characteristics
50
40
30
20
10
1.6
1.4
1.2
0.8
0.6
50
40
30
20
10
0
BFigure 3. On-Resistance Variation with
0
1
1.5
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
GS
DS
I
V
D
6.0V
GS
= 10V
= 5V
= 12.5A
-25
= 10V
2
V
V
0.5
GS
DS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
Temperature.
25
2.5
4.0V
T
A
= 125
50
1
o
C
3
3.5V
75
25
1.5
100
o
C)
o
C
-55
3.0V
3.5
o
C
125
150
2
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.025
0.015
0.005
0.001
0.03
0.02
0.01
0.01
2.2
1.8
1.6
1.4
1.2
0.8
100
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2
1
1
0
2
0
V
Drain Current and Gate Voltage.
V
GS
GS
T
= 3.5V
= 0V
A
= 25
Gate-to-Source Voltage.
0.2
V
4.0V
10
SD
o
C
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
, GATE TO SOURCE VOLTAGE (V)
T
A
4.5V
T
= 125
I
0.4
D
A
, DRAIN CURRENT (A)
= 125
20
o
C
o
C
5.0V
0.6
6
25
o
C
30
6.0V
0.8
-55
8
o
C
10V
40
FDS6680A Rev F1(W)
I
1
D
= 6.2A
50
10
1.2