FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 4

• Manufacturer Part Number: FDS6680A
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 5V
• Input Capacitance (ciss) @ Vds: 1620pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680ATR

Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.01
0
Figure 7. Gate Charge Characteristics.
I
0.001
D
0.01
= 12.5A
R
SINGLE PULSE
R
0.1
DS(ON)
0.0001
θJA
1
V
T
GS
A
= 125
= 25
5
LIMIT
= 10V
o
o
D = 0.5
C/W
C
0.1
V
0.2
DS
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
10
Q
0.01
g
, GATE CHARGE (nC)
SINGLE PULSE
0.001
15
1
DC
V
Figure 11. Transient Thermal Response Curve.
DS
10s
= 10V
20V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1s
100ms
20
10ms
0.01
1ms
10
15V
100 µ s
25
100
30
0.1
t
1
, TIME (sec)
2400
1800
1200
600
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
rss
1
5
0.01
C
V
Power Dissipation.
DS
oss
, DRAIN TO SOURCE VOLTAGE (V)
10
10
0.1
t
1
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
C
T
R
J
R
iss
θJA
1
- T
θJA
(t) = r(t) * R
A
20
= 125
t
100
1
= P * R
SINGLE PULSE
R
t
2
θ JA
T
A
= 125
o
C/W
= 25
10
θJA
FDS6680A Rev F1(W)
θJA
1
25
o
o
(t)
/ t
C
C/W
f = 1 MHz
V
2
GS
= 0 V
1000
100
30