FDS6680A Fairchild Semiconductor, FDS6680A Datasheet - Page 4
![MOSFET N-CH 30V 12.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6680A
Manufacturer Part Number
FDS6680A
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6680A.pdf
(5 pages)
Specifications of FDS6680A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6680ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
FDS6680A
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FSC
Quantity:
10 000
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Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
306
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Part Number:
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FSC
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Quantity:
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Part Number:
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Quantity:
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FDS6680A_NL
Manufacturer:
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Quantity:
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Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.01
0
Figure 7. Gate Charge Characteristics.
I
0.001
D
0.01
= 12.5A
R
SINGLE PULSE
R
0.1
DS(ON)
0.0001
θJA
1
V
T
GS
A
= 125
= 25
5
LIMIT
= 10V
o
o
D = 0.5
C/W
C
0.1
V
0.2
DS
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
10
Q
0.01
g
, GATE CHARGE (nC)
SINGLE PULSE
0.001
15
1
DC
V
Figure 11. Transient Thermal Response Curve.
DS
10s
= 10V
20V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1s
100ms
20
10ms
0.01
1ms
10
15V
100 µ s
25
100
30
0.1
t
1
, TIME (sec)
2400
1800
1200
600
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
rss
1
5
0.01
C
V
Power Dissipation.
DS
oss
, DRAIN TO SOURCE VOLTAGE (V)
10
10
0.1
t
1
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
C
T
R
J
R
iss
θJA
1
- T
θJA
(t) = r(t) * R
A
20
= 125
t
100
1
= P * R
SINGLE PULSE
R
t
2
θ JA
T
A
= 125
o
C/W
= 25
10
θJA
FDS6680A Rev F1(W)
θJA
1
25
o
o
(t)
/ t
C
C/W
f = 1 MHz
V
2
GS
= 0 V
1000
100
30