NDS9430 Fairchild Semiconductor, NDS9430 Datasheet

MOSFET P-CH 30V 5.3A 8-SOIC

NDS9430

Manufacturer Part Number
NDS9430
Description
MOSFET P-CH 30V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of NDS9430

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
528pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9430TR

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NDS9430
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
NDS9430
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
NDS9430
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–5.3 A, –30 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–5.3
–30
–20
125
2.5
1.2
50
25
20
1
= 60 m
=100 m
@ V
4
3
2
1
@ V
May 2002
GS
GS
2500 units
Quantity
= –10 V
= –4.5 V
NDS9430 Rev B
Units
C/W
W
V
V
A
C

Related parts for NDS9430

NDS9430 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ May 2002 –10 V DS(ON =100 –4.5 V DS(ON Ratings Units – –5.3 A –20 2.5 W 1.2 1 –55 to +175 C 50 C/W 125 25 Tape width Quantity 12mm 2500 units NDS9430 Rev B ...

Page 2

... CA b) 105°C/W when 2 mounted on a .04 in pad copper Min Typ Max Units –30 V –23 mV/ C –1 A 100 nA –100 nA –1 –1.7 –3 V 4.5 mV 100 57 73 – 528 pF 132 2 –2.1 A –0.8 –1 125°C/W when mounted on a minimum pad. NDS9430 Rev B ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V GS -4.0V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS9430 Rev 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 NDS9430 Rev B 30 1000 2 1000 ...

Page 5

CROSSVOLT â â â â Rev. H5 ...

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