NDS9430 Fairchild Semiconductor, NDS9430 Datasheet - Page 3

• Manufacturer Part Number: NDS9430
• Description: MOSFET P-CH 30V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of NDS9430

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9430TR

Typical Characteristics
15
12
30
20
10
9
6
3
0
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
GS
V
V
I
D
DS
GS
= -10V
1.5
= -5.3A
-25
= -5V
= -10V
1
-V
-V
DS
GS
0
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
J
-6.0V
, JUNCTION TEMPERATURE (
Temperature.
2
25
2.5
-5.0V
50
3
3
75
-4.5V
T
A
4
100
= -55
3.5
-4.0V
o
o
C
C)
125
-3.5V
-3.0V
125
5
4
o
150
C
25
o
C
175
4.5
6
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.2
0.1
0.001
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
100
0.1
10
2
2
1
1
0
0
Drain Current and Gate Voltage.
T
A
= 25
V
V
GS
GS
Gate-to-Source Voltage.
o
0.2
C
=-4.0V
=0V
-V
-V
SD
6
-4.0V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
o
0.6
C
25
6
-7.0V
o
C
0.8
18
-55
-8.0V
o
C
1
8
24
I
-10V
D
1.2
= -2.8A
NDS9430 Rev B
1.4
30
10