NDS9430 Fairchild Semiconductor, NDS9430 Datasheet - Page 4

• Manufacturer Part Number: NDS9430
• Description: MOSFET P-CH 30V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of NDS9430

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9430TR

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
0.01
D
R
SINGLE PULSE
R
0.1
= -5.3A
DS(ON)
0.0001
V
JA
1
T
GS
A
= 125
= 25
= -10V
LIMIT
D = 0.5
2
o
o
0.2
C
0.1
C/W
0.05
0.02
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
SINGLE PULSE
4
0.001
DC
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
6
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
10
= -5V
1ms
0.01
100 s
8
-15V
-10V
100
10
0.1
t
1
, TIME (sec)
800
700
600
500
400
300
200
100
50
40
30
20
10
0
0
0.001
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
RSS
1
0.01
5
C
-V
OSS
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
t
1
10
ISS
, TIME (sec)
15
1
Duty Cycle, D = t
P(pk)
T
R
10
20
J
R
JA
- T
JA
(t) = r(t) + R
100
A
SINGLE PULSE
R
= 125
= P * R
t
JA
1
T
t
A
100
2
= 125°C/W
25
= 25°C
o
C/W
f = 1 MHz
V
NDS9430 Rev B
GS
JA
1
= 0 V
(t)
JA
/ t
2
1000
30
1000