RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 2

• Manufacturer Part Number: RFD14N05L
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±10V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
©2010 Fairchild Semiconductor Corporation
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Capability Curve (Figure 5).
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
C, Unless Otherwise Specified
V
SYMBOL
V
Q
r
t
BV
t
Q
SD
DS(ON)
rr
t
d(OFF)
t
C
C
GS(TH)
Q
R
I
I
t
d(ON)
C
R
(OFF)
g(TOT)
DSS
GSS
(ON)
g(TH)
OSS
RSS
g(5)
θJC
ISS
θJA
t
DSS
t
r
f
I
I
SD
SD
I
V
V
V
V
I
V
R
R
V
V
V
V
Figure 14
TO-251 and TO-252
D
D
= 14A
= 14A, dI
GS
DS
DS
GS
DD
L
GS
GS
GS
GS
DS
= 250µA, V
= 14A, V
= 3.57Ω, V
= V
= 40V, V
= 40V, V
= ±10V
= 25V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 25V, V
= 0.6Ω
TEST CONDITIONS
DS
SD
, I
GS
TEST CONDITIONS
/dt = 100A/µs
D
J,
D
GS
GS
GS
GS
GS
= 5V, Figures 9, 11
= 7A,
T
= 250µA, Figure12
DGR
DSS
STG
= 0V
= 0V, T
= 0V, f = 1MHz
= 0V, Figure 13
= 5V,
DM
pkg
GS
AS
D
D
L
V
R
Figures 20, 21
C
DD
L
= 150
= 2.86Ω
= 40V, I
o
RFD14N05L, RFD14N05LSM,
C
Refer to Peak Current Curve
D
= 14A,
Refer to UIS Curve
-55 to 175
MIN
0.32
±10
-
-
300
260
50
50
14
48
MIN
50
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RFD14N05L, RFD14N05LSM Rev. B2
TYP
TYP
670
185
-
-
13
24
42
16
50
-
-
-
-
-
-
-
-
-
-
-
-
-
0.100
3.125
MAX
MAX
±100
125
100
100
1.5
1.5
50
60
40
25
2
1
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
V
V
A
C
C
C
o
UNITS
UNITS
o
o
C
C/W
C/W
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
Ω