RFD14N05L Fairchild Semiconductor, RFD14N05L Datasheet - Page 6

• Manufacturer Part Number: RFD14N05L
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD14N05L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±10V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test Circuits and Waveforms
©2010 Fairchild Semiconductor Corporation
V
GS
I
G(REF)
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 20. GATE CHARGE TEST CIRCUIT
V
GS
V
GS
R
GS
V
DS
V
DUT
DS
R
(Continued)
L
DUT
R
L
+
-
V
DD
+
-
V
DD
I
V
G(REF)
0
0
DD
V
0
0
V
V
GS
GS
DS
10%
V
= 1V
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
GS
FIGURE 21. GATE CHARGE WAVEFORMS
t
d(ON)
90%
50%
t
Q
ON
g(TH)
10%
t
r
Q
PULSE WIDTH
V
g(5)
DS
Q
g(TOT)
RFD14N05L, RFD14N05LSM Rev. B2
V
GS
= 5V
t
d(OFF)
90%
t
OFF
50%
t
f
10%
V
GS
90%
= 10V