FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 2

• Manufacturer Part Number: FDMS6681Z
• Description: MOSFET P-CH 30V 21.1A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6681Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 22.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 241nC @ 10V
• Input Capacitance (ciss) @ Vds: 10380pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6681ZTR

Qual/REL Plan Numbers : Q20090181
Qualification :
This change will not affect the devices' specifications or functional performance. Product
quality, reliability and MSL performance will be maintained. There will be no change to the part
number as both the Punch and Saw-singulated Power 56 share common land pattern dimensions
Pg. 2