FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet - Page 3

MOSFET P-CH 30V 21.1A POWER56

FDMS6681Z

Manufacturer Part Number
FDMS6681Z
Description
MOSFET P-CH 30V 21.1A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS6681Z

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.2 mOhm @ 22.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
241nC @ 10V
Input Capacitance (ciss) @ Vds
10380pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
21.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6681ZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS6681Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS6681Z
0
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Part Number:
FDMS6681Z
Quantity:
60 000
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Part Number:
FDMS6681Z
Quantity:
8 832
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15 000
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and are interchangeable. The reliability qualification is complete and results are detailed in the
attached table:
Results/Discussion for Qual Plan NumberQ20090181
Test: (Board Level Temperature Cycle) | Conditions: -10C, 100C | Standard: IPC-9701
Lot
Q20090181AABTMCL
Q20090181BABTMCL
Q20090181CABTMCL
Test: (High Temperature Reverse Bias) | Conditions: 125C, 24V | Standard: JESD22-A108
Lot
Q20090181BAHTRB
Q20090181BAHTRB
Q20090181CAHTRB
Q20090181CAHTRB
Test: (High Temperature Reverse Bias) | Conditions: 175C, 24V | Standard: JESD22-A108
Lot
Q20090181AAHTRB
Q20090181AAHTRB
Test: (High Temperature Storage Life) | Conditions: 175C | Standard: JESD22-A103
Lot
Q20090181AAHTSL
Q20090181BAHTSL
Q20090181CAHTSL
Test: (Highly Accelerated Stress Test) | Conditions: 85%RH, 130C, 24V | Standard: JESD22-A110
Lot
Q20090181AAHAST1
Q20090181BAHAST1
Q20090181CAHAST1
Test: (Power Cycle) | Conditions: Delta 100C, 2 Min cycle | Standard: MIL-STD-750-1036
Lot
Q20090181AAPRCL
Q20090181AAPRCL
Q20090181BAPRCL
Q20090181BAPRCL
Q20090181CAPRCL
Q20090181CAPRCL
Test: (Precondition) | Conditions: | Standard: JESD22-A113
Lot
Q20090181AAPCNL1A
Q20090181BAPCNL1A
Q20090181CAPCNL1A
Test: (Temperature Cycle) | Conditions: -65C, 150C | Standard: JESD22-A104
Lot
Q20090181AATMCL1
Q20090181AATMCL1
Q20090181BATMCL1
Q20090181BATMCL1
Q20090181CATMCL1
Q20090181CATMCL1
Test: (Unbiased HAST) | Conditions: 85%RH, 130C | Standard: JESD22-A118
Lot
Q20090181AAUHAST1
Q20090181BAUHAST1
Q20090181CAUHAST1
Product Id Description : Fairchild Semiconductor's selected MOSFET devices assembled in
Device
FDMS8692
FDMS8672AS
FDMS8670AS
Device
FDMS8672AS
FDMS8672AS
FDMS8670AS
FDMS8670AS
Device
FDMS8692
FDMS8692
Device
FDMS8692
FDMS8692
FDMS8672AS
FDMS8672AS
FDMS8670AS
FDMS8670AS
Device
FDMS8692
FDMS8692
FDMS8672AS
FDMS8672AS
FDMS8670AS
FDMS8670AS
Device
FDMS8692
FDMS8672AS
FDMS8670AS
Device
FDMS8692
FDMS8672AS
FDMS8670AS
Device
FDMS8692
FDMS8672AS
FDMS8670AS
Device
FDMS8692
FDMS8672AS
FDMS8670AS
100-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
168-HOURS
0/77
5000-CYCLES
0/77
0/77
0/77
100-CYCLES
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
96-HOURS
0/77
0/77
0/77
Results
0/231
0/231
0/231
96-HOURS
0/77
0/77
0/77
500-HOURS
0/77
0/77
500-HOURS
0/77
10000-CYCLES
0/77
0/77
0/77
500-CYCLES
0/77
0/77
0/77
1000
0/77
0/77
0/77
Failure Code
Failure Code
Failure Code
Failure Code
Failure Code
Failure Code
Failure Code
Failure Code
Failure Code
Pg. 3

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