FDPF10N50FT Fairchild Semiconductor, FDPF10N50FT Datasheet

MOSFET N-CH 500V 9A TO-220F

FDPF10N50FT

Manufacturer Part Number
FDPF10N50FT
Description
MOSFET N-CH 500V 9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF10N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1170pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
• R
• Low Gate Charge ( Typ. 18nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.71Ω ( Typ.) @ V
( Typ. 10pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
TO-220
FDP Series
= 10V, I
D
= 4.5A
T
C
Parameter
Parameter
= 25
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C unless otherwise noted*
o
C)
G
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP10N50F
FDP10N50F
62.5
125
5.4
1.0
1.0
36
9
G
-55 to +150
12.5
±30
500
364
300
20
9
FDPF10N50FT
FDPF10N50FT
S
D
0.33
62.5
5.4*
36*
3.0
42
UniFET
9*
January 2009
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FDPF10N50FT

FDPF10N50FT Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP10N50F / FDPF10N50FT Rev. A Description = 4.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... R = 25Ω, Starting ≤ 8A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP10N50F / FDPF10N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μA, V ...

Page 3

... GS 0.8 0 Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = oss 1500 C 1000 iss 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N50F / FDPF10N50FT Rev. A Figure 2. Transfer Characteristics 250 μ s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note 0.1 12 ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF10N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP10N50F / FDPF10N50FT Rev. A (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes: 1 ...

Page 5

... FDP10N50F / FDPF10N50FT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP10N50F / FDPF10N50FT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP10N50F / FDPF10N50FT Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : 2700V FDP10N50F / FDPF10N50FT Rev. A TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N50F / FDPF10N50FT Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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