FDPF10N50FT Fairchild Semiconductor, FDPF10N50FT Datasheet - Page 3

• Manufacturer Part Number: FDPF10N50FT
• Description: MOSFET N-CH 500V 9A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1170pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N50F / FDPF10N50FT Rev. A
Typical Performance Characteristics
2000
1500
1000
0.1
500
1.4
1.2
1.0
0.8
0.6
20
10
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
1
0.1
0
0.1
0
V
GS
=
15.0 V
12.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
4
DS
Drain Current and Gate Voltage
DS
C
C
C
,Drain-Source Voltage[V]
, Drain-Source Voltage [V]
oss
rss
iss
I
D
, Drain Current [A]
8
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
1
= 10V
*Notes:
1. 250
2. T
12
*Note: T
C
= 25
μ
V
(
s Pulse Test
C ds = shorted
GS
*Note:
o
C
= 20V
16
1. V
2. f = 1MHz
10
C
= 25
GS
= 0V
o
C
)
10
20
30
3
0.1
0.1
30
10
30
10
10
1
1
8
6
4
2
0
0.0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
2
Figure 6. Gate Charge Characteristics
0
V
SD
, Body Diode Forward Voltage [V]
4
V
150
0.4
4
Q
GS
150
Variation vs. Source Current
and Temperature
g
o
,Gate-Source Voltage[V]
, Total Gate Charge [nC]
C
o
V
V
V
C
DS
DS
DS
= 100V
= 250V
= 400V
8
0.8
6
25
o
*Notes:
-55
25
C
1. V
2. 250
12
o
o
*Notes:
1. V
2. 250
C
C
DS
*Note: I
GS
μ
= 20V
s Pulse Test
μ
1.2
= 0V
8
s Pulse Test
16
D
= 10A
www.fairchildsemi.com
10
1.6
20