FDPF10N50FT Fairchild Semiconductor, FDPF10N50FT Datasheet - Page 4

• Manufacturer Part Number: FDPF10N50FT
• Description: MOSFET N-CH 500V 9A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1170pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N50F / FDPF10N50FT Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
10
-100
8
6
4
2
0
25
-50
50
T
vs. Temperature
vs. Case Temperature
T
J
C
, Junction Temperature
, Case Temperature
0
0.005
0.01
75
Figure 10. Transient Thermal Response Curve - FDPF10N50FT
0.1
1
5
10
50
0.05
0.5
0.2
0.02
0.1
0.01
Single pulse
-5
100
100
[
o
10
*Notes:
C
[
1. V
2. I
]
-4
o
C
125
D
150
GS
]
= 250
= 0V
μ
10
A
200
150
Rectangular Pulse Duration [sec]
-3
(Continued)
10
-2
0.01
4
0.1
50
10
10
1
Figure 8. Maximum Safe Operating Area
1
-1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
V
1
θ
JM
DS
JC
- FDPF10N50FT
, Drain-Source Voltage [V]
- T
(t) = 3.0
10
DS(on)
C
*Notes:
t
1
= P
1. T
2. T
3. Single Pulse
t
2
o
DM
10
C
J
C/W Max.
= 150
= 25
* Z
DC
1
θ
/t
JC
o
2
o
C
C
(t)
10ms
100
10
1ms
2
100
μ
s
20
μ
s
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