FDPF12N50FT Fairchild Semiconductor, FDPF12N50FT Datasheet

MOSFET N-CH 500V 11.5A TO-220F

FDPF12N50FT

Manufacturer Part Number
FDPF12N50FT
Description
MOSFET N-CH 500V 11.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF12N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1395pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11.5 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP12N50F / FDPF12N50FT Rev. A1
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω
Features
• R
• Low gate charge ( Typ. 21nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.59Ω ( Typ.)@ V
( Typ. 11pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
G
o
C unless otherwise noted
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
TO-220F
FDPF Series
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP12N50F FDPF12N50FT
FDP12N50F FDPF12N50FT
11.5
1.33
165
0.75
62.5
6.9
46
0.5
-55 to +150
16.5
S
11.5
D
500
±30
456
300
4.5
December 2007
11.5*
0.33
6.9*
62.5
46*
3.0
UniFET
42
-
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDPF12N50FT

FDPF12N50FT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50F / FDPF12N50FT Rev. A1 Description = 6A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 11.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP12N50F / FDPF12N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = oss C rss = C gd 1500 C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP12N50F / FDPF12N50FT Rev. A1 Figure 2. Transfer Characteristics 30 10 µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 20V Note : ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP12N50F 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDP12N50F / FDPF12N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 100 10 1 0.1 * Notes : µ 250 A D 0.01 100 150 200 1 o ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF12N50FT 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP12N50F / FDPF12N50FT Rev. A1 (Continued) * Notes : - Rectangular Pulse Duration [sec ( C/W Max. θ Duty Factor, D (t) θ www.fairchildsemi.com ...

Page 6

... FDP12N50F / FDPF12N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP12N50F / FDPF12N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP12N50F / FDPF12N50FT Rev. A1 TO-220 8 www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50F / FDPF12N50FT Rev. A1 TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50F / FDPF12N50FT Rev. A1 FPS™ PDP-SPM™ ® ® FRFET Power220 ® SM Global Power Resource Power247 Green FPS™ ...

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