FDPF12N50FT Fairchild Semiconductor, FDPF12N50FT Datasheet - Page 3

MOSFET N-CH 500V 11.5A TO-220F

FDPF12N50FT

Manufacturer Part Number
FDPF12N50FT
Description
MOSFET N-CH 500V 11.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF12N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1395pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11.5 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF12N50FT
Manufacturer:
FSC
Quantity:
500
Part Number:
FDPF12N50FT
Manufacturer:
Fairchi/ON
Quantity:
17 411
Part Number:
FDPF12N50FT
Manufacturer:
FAIRCHILD
Quantity:
8 000
FDP12N50F / FDPF12N50FT Rev. A1
Typical Performance Characteristics
0.05
2000
1500
1000
Figure 5. Capacitance Characteristics
0.1
Figure 3. On-Resistance Variation vs.
30
10
500
Figure 1. On-Region Characteristics
0.9
0.8
0.7
0.6
0.5
1
0.1
0
0.1
0
V
GS
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
V
Drain Current and Gate Voltage
DS
DS
C
,Drain-Source Voltage[V]
C
C
, Drain-Source Voltage [V]
oss
rss
I
iss
D
, Drain Current [A]
6
V
GS
1
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
= 10V
*Notes:
V
1. 250
2. T
GS
* Note : T
C
= 20V
12
= 25
µ
s Pulse Test
(
C ds = shorted
o
* Note:
C
1. V
2. f = 1MHz
10
J
10
= 25
GS
= 0V
o
C
20
)
18
30
3
100
30
10
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
10
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.0
4
0
V
SD
4
, Body Diode Forward Voltage [V]
150
Q
V
Variation vs. Source Current
and Temperature
0.5
5
g
GS
V
V
V
, Total Gate Charge [nC]
o
DS
DS
DS
C
,Gate-Source Voltage[V]
= 100V
= 250V
= 400V
8
150
o
C
1.0
12
6
25
* Notes :
o
25
C
1. V
2. 250
o
Notes:
1. V
2. 250
* Note : I
C
16
DS
GS
µ
= 20V
µ
s Pulse Test
1.5
= 0V
s Pulse Test
7
D
20
= 11.5A
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