NDP6060L Fairchild Semiconductor, NDP6060L Datasheet - Page 3

• Manufacturer Part Number: NDP6060L
• Description: MOSFET N-CH 60V 48A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of NDP6060L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
S
SM
rr
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
SD
JC
JA
Parameter
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= 24 A
= 48 A,
(Note 1)
T
J
= 125°C
Min
35
2
NDP6060L Rev. D / NDB6060L Rev. E
Typ
3.6
75
Max
62.5
144
140
1.3
1.2
1.5
48
8
Units
°C/W
°C/W
ns
A
A
V
A