NDP6060L Fairchild Semiconductor, NDP6060L Datasheet - Page 6

• Manufacturer Part Number: NDP6060L
• Description: MOSFET N-CH 60V 48A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of NDP6060L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 48 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
0.05
0.03
0.02
0.01
4 0
3 0
2 0
1 0
0
0.5
0.3
0.2
0.1
Figure 13. Transconductance Variation with
0
1
0.01
0.05
0.02
0.01
0.1
Drain Current. and Temperature
0.02
0.2
T = -55°C
J
D = 0.5
1 0
Single Pulse
0.05
I
D
, DRAIN CURRENT (A)
25°C
0.1
Figure 15. Transient Thermal Response Curve.
2 0
125°C
0.2
(continued)
3 0
0.5
V
DS
=10V
1
4 0
2
t ,TIME (m s)
1
3 0 0
2 0 0
1 0 0
5 0
2 0
1 0
5
2
1
1
5
Figure 14. Maximum Safe Operating. Area
R
SINGLE PULSE
10
T
2
JC
V
C
GS
= 1.5 C/W
= 25°C
= 5V
3
V
20
DS
o
, DRAIN-SOURCE VOLTAGE (V)
5
50
P(pk)
1 0
T - T
R
Duty Cycle, D = t /t
J
100
R
JC
t
1
C
JC
(t) = r(t) * R
2 0
t
= P * R
NDP6060L Rev. D / NDB6060L Rev. E
2
= 1.5 °C/W
200
3 0
JC
1
JC
(t)
2
6 0
500
1 0 0
1000