NDP6060L Fairchild Semiconductor, NDP6060L Datasheet - Page 5

MOSFET N-CH 60V 48A TO-220AB

NDP6060L

Manufacturer Part Number
NDP6060L
Description
MOSFET N-CH 60V 48A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDP6060L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
2000pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
48 A
Power Dissipation
100000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDP6060L
Manufacturer:
FSC
Quantity:
535
Part Number:
NDP6060L
Manufacturer:
ON/FSC/NSC
Quantity:
12 500
Part Number:
NDP6060L
Manufacturer:
NS/国半
Quantity:
20 000
Typical Electrical Characteristics
V
GEN
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
1.1
0.9
Figure 7. Breakdown Voltage Variation with
1
1
-50
Figure 9. Capacitance Characteristics.
I
D
Figure 11. Switching Test Circuit
R
f = 1 MHz
V
= 250µA
GS
Temperature.
-25
GEN
= 0 V
R
2
GS
V
DS
0
T
V
J
3
, DRAIN TO SOURCE VOLTAGE (V)
IN
, JUNCTION TEMPERATURE (°C)
G
2 5
5
5 0
D
S
V
DD
7 5
1 0
R
L
1 0 0
D U T
(continued)
2 0
1 2 5
.
C iss
V
C oss
3 0
O U T
1 5 0
C rss
1 7 5
5 0
V
t
V
O U T
d(on)
IN
0.0001
1 0
Figure 8. Body Diode Forward Voltage
1 0 %
0.001
8
6
4
2
0
0.01
Figure 10. Gate Charge Characteristics
0
0.1
8 0
1 0
1
0.2
I
D
T = 125°C
Figure 12. Switching Waveforms.
Variation with Current and Temperature
= 48A
J
t
5 0 %
o n
0.4
1 0 %
V
SD
2 0
t
9 0 %
PULSE W IDTH
0.6
r
, BODY DIODE FORWARD VOLTAGE (V)
Q
25°C
g
, GATE CHARGE (nC)
0.8
t
d(off)
V
4 0
DS
-55°C
1
= 12V
5 0 %
NDP6060L Rev. D / NDB6060L Rev. E
1.2
9 0 %
t
1 0 %
o f f
9 0 %
6 0
24V
1.4
48V
V
GS
INVERTED
.
t
= 0V
f
1.6
.
1.8
8 0

Related parts for NDP6060L