AO4459 Alpha & Omega Semiconductor Inc, AO4459 Datasheet

MOSFET P-CH -30V -6.5A 8-SOIC

AO4459

Manufacturer Part Number
AO4459
Description
MOSFET P-CH -30V -6.5A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4459

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
830pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1036-2

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Rev 1: Dec 2009
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4459 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
and battery protection applications.
D
D
D
Top View
DS(ON)
B
Parameter
D
C
C
T
T
T
T
. This device is ideal for load switch
S
A
A
A
A
=25°C
=70°C
=25°C
=70°C
S
SOIC-8
C
S
A
A D
A
G
=25°C unless otherwise noted
Bottom View
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
J
www.aosmd.com
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
θJA
θJL
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=-10V)
Tested
GS
GS
Maximum
-55 to 150
=-10V)
= -4.5V)
±20
-6.5
-5.3
-30
-30
3.1
17
14
2
30V P-Channel MOSFET
G
Max
40
75
24
D
S
-30V
-6.5A
< 46mΩ
< 72mΩ
AO4459
Units
Units
°C/W
°C/W
°C/W
mJ
Page 1 of 6
°C
W
V
V
A
A

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AO4459 Summary of contents

Page 1

... General Description The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SOIC-8 Top View Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Drain-Source Voltage ...

Page 2

... Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. θJL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO4459 Min Typ Max Units - =55°C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-6.5A D 1.0E+01 40 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4459 125°C 25°C 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -V (Volts =-10V GS I =-6. =-4. =- ...

Page 4

... Figure 8: Capacitance Characteristics 100.0 =100°C A 10.0 R DS(ON) limited T =125°C A 1.0 0.1 0.0 0.01 100 1000 (µs) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4459 C iss C oss (Volts) DS 10µs 100µs 1ms 10ms T =150°C J(Max) 10s T =25°C ...

Page 5

... Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Dec 2009 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse P D 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4459 100 1000 Page ...

Page 6

... DUT Resistive Switching Test Circuit & Waveforms Vgs d(on Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs -Isd - Vdd VDC - -Vds www.aosmd.com AO4459 Qg Qgd Charge t off t t d(off) f 90% 10% BV DSS dI/ Vdd Page ...

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