AO4459 Alpha & Omega Semiconductor Inc, AO4459 Datasheet - Page 2

• Manufacturer Part Number: AO4459
• Description: MOSFET P-CH -30V -6.5A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4459

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 830pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1036-2

Rev 1: Dec 2009
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation P
C. Repetitive rating, pulse width limited by junction temperature T
initialT
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2oz. Copper, assuming a maximum junction temperature of T
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
J
=25°C.
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device mounted on 1in
D
is based on T
Parameter
J
=25°C unless otherwise noted)
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
www.aosmd.com
J(MAX)
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
2
D
S
F
F
J(MAX)
FR-4 board with 2oz. Copper, in a still air environment with T
=150°C. The SOA curve provides a single pulse rating.
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=-6.5A, dI/dt=100A/µs
=-6.5A, dI/dt=100A/µs
=-1A,V
GEN
=-250µA, V
=-30V, V
=0V, V
=V
=-5V, I
=-10V, V
=-10V, I
=-4.5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3Ω
=150°C. Ratings are based on low frequency and duty cycles to keep
θJL
GS
and lead to ambient.
GS
I
D
GS
D
DS
DS
=0V
=-250µA
=-6.5A
D
D
GS
= ±20V
DS
=-15V, f=1MHz
=0V, f=1MHz
DS
DS
=-6.5A
GS
=-5A
=0V
=-5V
=-15V, I
=-15V, R
=0V
D
T
=-6.5A
L
T
J
=2.5Ω,
=125°C
J
=55°C
Min
-1.4
415
-30
-30
3.5
7.4
3.7
1.3
1.3
8.8
70
40
4
Typ
-1.9
-0.8
520
100
7.5
9.2
4.6
1.6
2.2
7.5
5.5
5.3
33
50
53
14
65
19
11
7
2
A
FR-4 board with
=25°C. The value
±100
Max
11.5
-2.4
-3.5
625
130
1.9
3.1
6.4
46
68
72
90
11
13
-1
-5
-1
6
Page 2 of 6
AO4459
Units
mΩ
mΩ
µA
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A