AO4425 Alpha & Omega Semiconductor Inc, AO4425 Datasheet
AO4425
Specifications of AO4425
Available stocks
Related parts for AO4425
AO4425 Summary of contents
Page 1
... AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4425/L uses advanced trench technology to provide excellent R , and ultra-low low gate DS(ON) charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications ESD protected. AO4425 and AO4425L are electrically identical ...
Page 2
... AO4425 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 3
... AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -20V 25 -10V -5V 20 -4.5V - (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 15 125°C 10 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -3. =- 1.6 =-10V GS 1.4 1.2 ...
Page 4
... AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-14A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1 =150°C 10s J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =40°C/W θJA 1 0.1 Single Pulse ...