AO4425 Alpha & Omega Semiconductor Inc, AO4425 Datasheet - Page 4

• Manufacturer Part Number: AO4425
• Description: MOSFET P-CH -38V -14A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4425

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 14A, 20V
• Drain To Source Voltage (vdss): 38V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3800pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1026-2

AO4425
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.01
100.0
0.1
10.0
10
0.00001
1.0
0.1
1
10
8
6
4
2
0
0.1
0
R
limited
T
T
J(Max)
A
DS(ON)
=25°C
V
I
D
DS
Figure 9: Maximum Forward Biased Safe
=-14A
=150°C
10
=-15V
Figure 7: Gate-Charge Characteristics
D=T
T
R
0.0001
J,PK
θJA
Operating Area (Note E)
=40°C/W
on
20
=T
1s
/T
1
A
+P
10s
Single Pulse
-V
DM
30
DS
-Q
.Z
(Volts)
θJA
g
0.001
(nC)
DC
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
40
θJA
10ms
1ms
0.1s
10
50
10µs
100µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
60
100
Pulse Width (s)
70
0.1
-12.8
5000
4000
3000
2000
1000
40
30
20
10
0
0.001
0
-15
0
Figure 10: Single Pulse Power Rating Junction-to-
C
rss
0.01
1
Figure 8: Capacitance Characteristics
P
10
C
D
oss
0.1
T
Ambient (Note E)
Pulse Width (s)
on
10
-V
T
DS
1
20
(Volts)
10
100
T
T
J(Max)
A
C
=25°C
iss
30
=150°C
100
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1000
1000
40