This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 7’’ January 2001 –4.5 V DS(ON –2.5 V DS(ON 100 –1.8 V DS(ON provides low R and 30% higher DS(ON Ratings Units – –2.4 A –10 0.5 W 0.46 –55 to +150 C 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN304P Rev C(W) ...
... –4 –0. determined by the user's board design 270°C/W when mounted on a minimum pad. 2.0% Min Typ Max Units –20 V –13 mV/ C –1 A 100 nA –100 nA –0.4 –0.8 –1 mV 100 – 1312 pF 240 pF 106 –0.42 A –0.6 –1.2 V (Note 2) FDN304P Rev C(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -3.0V -4. DRAIN CURRENT ( -1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN304P Rev C( 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 1000 FDN304P Rev C(W) ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...