FDN304P Fairchild Semiconductor, FDN304P Datasheet - Page 4

• Manufacturer Part Number: FDN304P
• Description: MOSFET P-CH 20V 2.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN304P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1312pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 2.4A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN304PTR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
R
D
SINGLE PULSE
R
0.01
DS(ON)
0.1
= -2.4A
V
JA
T
0.0001
1
2
GS
A
= 270
= 25
=-4.5V
o
o
C
C/W
-V
4
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
g
1
, GATE CHARGE (nC)
0.1
0.05
0.02
0.01
6
0.001
DC
10s
SINGLE PULSE
1s
100ms
Figure 11. Transient Thermal Response Curve.
8
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
DS
10ms
10
= -5V
10
0.01
1ms
-15V
12
-10V
100
14
0.1
t
1
, TIME (sec)
2100
1800
1500
1200
20
15
10
900
600
300
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
C
C
ISS
t
OSS
RSS
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
100
JA
10
(t) = r(t) + R
A
t
= 270 °C/W
1
= P * R
t
2
SINGLE PULSE
R
15
JA
T
A
100
= 270°C/W
= 25°C
JA
FDN304P Rev C(W)
V
f = 1MHz
1
(t)
GS
JA
/ t
2
= 0 V
1000
1000
20