FDN304P Fairchild Semiconductor, FDN304P Datasheet - Page 3

• Manufacturer Part Number: FDN304P
• Description: MOSFET P-CH 20V 2.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN304P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1312pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 2.4A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN304PTR

Typical Characteristics
15
12
15
12
9
6
3
0
9
6
3
0
0
Figure 3. On-Resistance Variation with
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
V
GS
V
DS
I
GS
-3.0V
D
= -4.5V
0.5
= -2.4A
-25
= - 5V
= -4.5V
0.5
-V
-V
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
, DRAIN-SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-2.5V
1
1
25
-2.0V
1.5
T
A
50
=
1.5
-1.8V
75
2
-1.5V
-55
o
100
o
C
25
C)
2
o
C
2.5
125
2.5
150
3
Figure 6. Body Diode Forward Voltage Variation
0.14
0.12
0.08
0.06
0.04
0.02
0.1
0.0001
0.001
0.01
3.5
2.5
1.5
0.5
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
0.1
with Source Current and Temperature.
10
4
3
2
1
1
0
0
Drain Current and Gate Voltage.
V
T
V
GS
A
GS
= 25
= 0V
= -1.5V
Gate-to-Source Voltage.
0.2
o
C
-V
T
-V
A
3
SD
2
= 125
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
o
C
-I
-1.8V
D
, DRAIN CURRENT (A)
25
T
6
o
0.6
A
C
-2.0V
= 125
-55
3
o
o
C
C
0.8
-2.5V
9
-3.0V
1
4
12
FDN304P Rev C(W)
I
D
-4.5V
1.2
= -1.2 A
1.4
15
5