SPD06N60C3 Infineon Technologies, SPD06N60C3 Datasheet
SPD06N60C3
Specifications of SPD06N60C3
SP000307394
SPD06N60C3
SPD06N60C3INTR
SPD06N60C3XT
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SPD06N60C3 Summary of contents
Page 1
... D,pulse =3 = 1 =480 /dt T =125 ° static >1 Hz =25 °C tot stg dv/dt Page 1 SPD06N60C3 @ T 650 DS j,max 0.75 DS(on),max 6.2 PG-TO252 Value 6.2 3.9 18.6 200 0.5 6.2 50 ±20 ±30 74 -55 ... 150 15 V Ω A Unit V/ °C V/ns 2008-04-11 ...
Page 2
... V =600 DSS T =25 ° =600 =150 ° = GSS = =3 DS(on) T =25 ° = =3 =150 ° MHz, open drain G |V |>2 DS(on)max =3 Page 2 SPD06N60C3 Values min. typ. max 1 cooling - 260 600 - - 700 2 100 = 100 - 0.68 0. 5.6 Unit K/W - ° µA nA Ω ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy 4) related Effective output capacitance, time 5) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate ...
Page 4
... C I S,pulse =6 =25 ° =480 /dt =100 A/µ rrm Unit Symbol Value typ. K/W C 0.0000502 th1 C 0.000303 th2 C 0.000428 th3 C 0.00243 th4 C 0.00344 th5 C 6) 0.198 th6 Page 4 SPD06N60C3 Values Unit min. typ. max 6 18.6 - 0.97 1 400 - ns - 3.5 - µ Unit Ws/K 2008-04-11 ...
Page 5
... Max. transient thermal impedance I =f =25 ° parameter 0.2 0.1 0. 0.02 0.01 single pulse - [s] p Rev. 1.5 2 Safe operating area I =f parameter 120 160 4 Typ. output characteristics I =f parameter Page 5 SPD06N60C3 ); T =25 ° limited by on-state resistance [ =25 ° µs 10 µs 100 µ 6 2008-04-11 ...
Page 6
... Drain-source on-state resistance =10 V DS(on 1.6 1 0.8 0.4 0 -60 - [°C] j Rev. 1.5 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 5 4 [V] 8 Typ. transfer characteristics I =f parameter typ 5 0 100 140 180 Page 6 SPD06N60C3 ); T =150 ° |>2 DS(on)max [ °C 150 ° 2008-04-11 ...
Page 7
... AR Rev. 1.5 10 Forward characteristics of reverse diode I =f parameter 480 [nC] 12 Avalanche energy E =f(T AS 250 200 150 100 125 °C 25 ° Page 7 SPD06N60C3 ) j 25 °C 25 °C, 98% 150 °C 0 0.5 1 1 100 140 T [°C] j 150 °C, 98% 2 2.5 180 2008-04-11 ...
Page 8
... D 700 660 620 580 540 -60 - [° Typ. C stored energy oss E = f(V ) oss 100 200 300 V DS Rev. 1.5 14 Typ. capacitances C =f 100 140 180 400 500 600 [V] Page 8 SPD06N60C3 ); MHz GS Ciss Coss Crss 0 100 200 300 V [V] DS 400 500 2008-04-11 ...
Page 9
... Definition of diode switching characteristics Rev. 1.5 Page 9 SPD06N60C3 2008-04-11 ...
Page 10
... PG-TO252-3-1: Outline , PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 1.5 Page 10 SPD06N60C3 2008-04-11 ...
Page 11
... Rev. 1.5 Page 11 SPD06N60C3 2008-04-11 ...